The carrier yield in a-Se under electron bombardment

Article

Hirsch, J and Jahankhani, Hossein 1989. The carrier yield in a-Se under electron bombardment. Journal of Physics: Condensed Matter. 1 (45), pp. 8789-8798.
AuthorsHirsch, J and Jahankhani, Hossein
Abstract

The authors describe measurements of the field and dose dependence of the carrier yield produced in a-Se by electron beam excitation, using a flight-time technique. The results show that the yield is controlled by stronger initial recombination than that predicted by the Onsager mechanism which governs the photoelectric yield. This strong process is attributed to bimolecular recombination along the tracks of the primary electrons (columnar recombination). On this interpretation, the effective average pair-production energy is approximately 18 eV. The authors speculate on the origin of this high value.

Keywordscarrier yield produced in a-Se by electron beam; Semiconductors
JournalJournal of Physics: Condensed Matter
Journal citation1 (45), pp. 8789-8798
ISSN0953-8984
Year1989
Accepted author manuscript
License
CC BY-ND
Web address (URL)http://hdl.handle.net/10552/1477
Publication dates
PrintNov 1989
Publication process dates
Deposited19 Mar 2012
Additional information

Citation:
Hirsch , J. and Jahankhani, H.(1989) The carrier yield in a-Se under electron bombardment , Journal of Physics: Condensed Matter 1 (45) 8789-8798.

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Accepted author manuscript
1989_Hirsch_Jahankhani_a-Se.pdf
License: CC BY-ND

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